5SHY35L4520 5SHY series ABB SCR IGCT card

5SHY35L4520 5SHY series ABB SCR IGCT card

Article number :5SHY35L4520
Communication protocol ABB’s DriveBus
Master or slave Master
Transmission speed 8 Mbit/s
Line redundancy No
Module redundancy No
Hot Swap Yes
Used together with HI Controller No

Contact : Zoe
WhatsApp: +86-15359298206
Phone: +86-15359298206 (Wechat)
E-mail: 2851759107@qq.com
QQ : 2851759107

 

5SHY35L4520 5SHY series ABB SCR IGCT card

5SHY35L4520 5SHY series ABB SCR IGCT card

 

Article number :5SHY35L4520
Communication protocol ABB’s DriveBus
Master or slave Master
Transmission speed 8 Mbit/s
Line redundancy No
Module redundancy No
Hot Swap Yes
Used together with HI Controller No

Contact : Zoe
WhatsApp: +86-15359298206
Phone: +86-15359298206 (Wechat)
E-mail: 2851759107@qq.com
QQ : 2851759107

 

SCR can be divided into spiral type, flat type and flat-bottomed type in terms of appearance, and spiral type is widely used. SCR has three electrodes – anode (A) cathode (C) and control electrode (G). It has a four-layer structure composed of P-type conductor and N-type conductor, and has three PN junctions. The structure of thyristor and silicon rectifier diode with only one PN junction is very different. The four-layer structure of silicon controlled rectifier and the use of control poles lay the foundation for its excellent control characteristics of “controlling large by small”. When applying silicon controlled rectifier, as long as a small current or voltage is applied to the control electrode, a large anode current or voltage can be controlled. Thyristor element with current capacity of hundreds of amperes to thousands of amperes. Generally, the SCR with less than 5 amperes is called low-power SCR, and the SCR with more than 50 amperes is called high-power SCR.

Voltage measurement method

Why does SCR have the controllability of “controlling large by small”? Next, we will use Chart – 27 to briefly analyze the working principle of SCR.

First of all, the first, second and third layers from the cathode up can be seen as one NPN transistor, while the second and third layers form another PNP transistor. The second and third layers are shared by two pipes. When a positive voltage Ea is applied between the anode and cathode, and a positive trigger signal is input between the control electrode G and the cathode C (equivalent to the base beam of BG1), BG1 will generate the base current Ib1. After amplification, one of BG1 will be amplified β One time of collector current IC1. Because BG1 collector is connected to BG2 base, IC1 is the base current Ib2 of BG2. BG2 magnifies the ratio of Ib2 (Ib1) β The collector current IC2 of 2 is sent back to the base of BG1 for amplification. In this way, the loop is amplified until BG1 and BG2 are fully connected. In fact, this process is a “trigger triggered” process. For the thyristor, the trigger signal is added to the control pole, and the thyristor is immediately turned on. The conduction time is mainly determined by the performance of thyristor.

 

Other relevant models
5SHX0360D0001 IGCT MODULE 38 MM/6KV, HL000384P0101, 3BHB004027R0101
5SHX0660F0001 3BHB003387R0101 GVC703AE01 3BHL00386P0101
5SHX0660F0002 3BHE022333R0101
5SHX06F6004 3BHB003387R0101/5SXE05-0151/3BHB003151P104
5SHX0845F0001 3BHL000385P0101 3BHB003387R0101 5SXE05-0151
5SHX1060H0001 3BHB003230R0101  3BHL000392P0101
5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101
5SHX10H6004
5SHX1445H0001 3BHL000391P0101
5SHX14H4502 3BHB003230R0101 5SXE05-0152 3BHB003023P201
5SHX1960L0004  3BHL000390P0104
5SHX2645L0002  3HB012961R0001
5SHX2645L0004  3BHL000389P0104
5SHX2645L0006  3BHB012961R0002
5SHY3545L0002  3BHE009681R0101  CVC750BE101
KUC711AE 3BHB004661R0001
KUC711AE01 3BHB004661R0001
KUC711AE101 3BHB004661R0101
KUC720AE 3BHB000652R0001
5SHY3545L0014
5SHY3545L0016  3BHB020720R0002
5SHY35L4520
5SHY4045L0004  3BHB021400R0002
5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101
5SHY5045L0020  AC10272001R0101  5SXE10-0181
5SHY5055L0002 3BHE019719R0101 GVC736BE101
5SHX1060H0003
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