5SHX0660F0001 3BHB003387R0101 ABB IGCT high-voltage converter module

5SHX0660F0001 3BHB003387R0101 ABB IGCT high-voltage converter module

High-power devices and their development

Gate turn-off thyristor

High power thyristor (SCR) is almost the only semiconductor device capable of withstanding high voltage and high current for a long time in the past. Therefore, in view of the shortcomings of SCR, people naturally directed their efforts to how to make the thyristor have the turn-off ability, and thus developed the gate turn-off thyristor.

Using GTO thyristor as the inverter device has achieved relatively satisfactory results, but its turn-off control is easy to fail, so it is still complex, and the working frequency is not high enough. Almost at the same time, the power transistor (GTR) has developed rapidly, making the GTO thyristor more similar. Therefore, GTO thyristor is basically not used in a large number of medium and small capacity converters. However, due to its large working current, it still plays a major role in large-capacity inverter.

Insulated gate bipolar transistor (IGBT)

IGBT is the product of the combination of MOSFET and GTR. Its main part is the same as the transistor, and also has the collector (C) and the emitter (E), but the driving part is the same as the field effect transistor, which is an insulated gate structure.

The working characteristics of IGBT are: the control part is the same as the field effect transistor, the control signal is voltage signal UGE, the input impedance is high, the gate current IG ≈ 0, and the drive power is very small. The main circuit is the same as GTR, and the working current is the collector current input. In addition, its working frequency can reach 20kHz. The carrier frequency of the inverter with IGBT as the inverter is generally above 10kHz, so the current waveform of the motor is relatively smooth and basically free of electromagnetic noise.

Although the research of silicon bipolar and field-controlled power devices has become mature, their performance is still improving. The integrated i] pole commutation thyristor (IGCT) that appears in recent years is expected to rapidly replace GTO.