5SHX0360D0001 IGCT MODULE 38 MM/6KV,

5SHX0360D0001 IGCT MODULE 38 MM/6KV,

Brand: ABB
ltem NO.: 5SHX0360D0001
Order(M0Q):1
Payment:T/T
Product Origin:USA
Color:Brand New
Shipping Port:Xiamen
Lead Time: In Stock

Contact : Zoe
E-mail: 2851759107@qq.com
WhatsApp: +86-15359298206
Phone: +86-15359298206 (Wechat)
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5SHX0360D0001 IGCT MODULE 38 MM/6KV,

5SHX0360D0001 IGCT MODULE 38 MM/6KV,

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ABB Gate turn-off thyristor module 5SHX0360D0001 Gate Module. IGCT technology for maximal loadability in combination with minimal part count. Design And Implementation Of PLC Module In NC Embedded System 5SHX0360D0001 Module.


5SHX0360D0001

ACS 6000IGCT technology for maximal loadability in combination with minimal part count.Active Rectifier Unit (ARU)Self-commutated, 6-pulse,3-level voltage source inverterwith lGCT technology.

5SHY4045L0006

High snubberless turn-off rating

Optimized for medium frequency (<l kHz) andwide temperature range

High reliability

High electromagnetic immunity

Simple control interface with status feedbackAC or DC supply voltage

Contact factory for series connection

Power Electronic Building Block (PEBB), one phase leg of a three-level Voltage Source Inverter (VSI) topology to be configured to act as an AC to DC or DC to AC converter

Power Electronic Building Block (PEBB),

5SHY4045L0006ABB ACS 6000 System Integration

Our company is a company specializing in large systems (distributed control system, programmable controller, redundant fault tolerant control system, robot system) spare parts sales for many years. Our main brands are Foxboro, Tricon, Bently, Honeywell, Ovation, MOTOROLA, Xycom, ABB, Allen-Bradley, Schneider, Siemens, GE Fanuc, Askawa, Woodward and other high-tech enterprises which are automatic system spare parts sales and system integration. We are committed to providing parts support for your installed control systems and drives through spare parts service. We have a large internal inventory including (DCS, PLC, CNC), panel controllers, HMI, industrial PCS, drives, power and servo motors and production control system parts to reduce the maintenance cost of your spare parts. We’ve also released a lot of new hardware to help support your existing installation or take advantage of the latest technology.

High-power devices and their development

Gate turn-off thyristor

High power thyristor (SCR) is almost the only semiconductor device capable of withstanding high voltage and high current for a long time in the past. Therefore, in view of the shortcomings of SCR, people naturally directed their efforts to how to make the thyristor have the turn-off ability, and thus developed the gate turn-off thyristor.

Using GTO thyristor as the inverter device has achieved relatively satisfactory results, but its turn-off control is easy to fail, so it is still complex, and the working frequency is not high enough. Almost at the same time, the power transistor (GTR) has developed rapidly, making the GTO thyristor more similar. Therefore, GTO thyristor is basically not used in a large number of medium and small capacity converters. However, due to its large working current, it still plays a major role in large-capacity inverter.

Insulated gate bipolar transistor (IGBT)

IGBT is the product of the combination of MOSFET and GTR. Its main part is the same as the transistor, and also has the collector (C) and the emitter (E), but the driving part is the same as the field effect transistor, which is an insulated gate structure.

The working characteristics of IGBT are: the control part is the same as the field effect transistor, the control signal is voltage signal UGE, the input impedance is high, the gate current IG ≈ 0, and the drive power is very small. The main circuit is the same as GTR, and the working current is the collector current input. In addition, its working frequency can reach 20kHz. The carrier frequency of the inverter with IGBT as the inverter is generally above 10kHz, so the current waveform of the motor is relatively smooth and basically free of electromagnetic noise.

Although the research of silicon bipolar and field-controlled power devices has become mature, their performance is still improving. The integrated i] pole commutation thyristor (IGCT) that appears in recent years is expected to rapidly replace GTO.

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5SHY3545L0014
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5SHY35L4520
5SHY4045L0004  3BHB021400R0002
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